代理ISSI高速异步静态存储器IS61V25616AL-10TL与3.3V供电的（256*16）RAM

来源:深圳市宝星微科技有限公司 | 发布时间:2017-11-21 | 浏览次数：

宝星微科技代理ISSI高速异步静态存储器IS61V25616AL-10TL与3.3V供电的RAM，工作温度民用级0-+70，TSOP44封装数据更加稳定,（256*16）4M,深圳常备现货，原装正品供应。

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technol-ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).

主要特点：

• High-speed access time:
— 10, 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available

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