代理ISSI高速异步静态存储器IS61LV6416-10TLI(图片)与3.3V供电的（64*16）RAM

宝星微科技代理ISSI高速异步静态存储器IS61LV6416-10TLI与3.3V供电的RAM，工业级-40-+85，数据更加稳定,（64*16）1M,高速高性价比低功耗，深圳常备现货，原装正品供应。

FEATURES
• High-speed access time: 8, 10, 12 ns
• CMOS low power operation
— 61LV6416:
     75 mW (typical) operating current
     0.5 mW (typical) standby current
— 61LV6416L:
     65 mW (typical) operating current
     50 µW (typical) standby current
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available 

DESCRIPTION
The  ISSI IS61LV6416/IS61LV6416L is a high-speed,
1,048,576-bit static RAM organized as 65,536 words by 16
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs, CE and OE. The active
LOW Write Enable (WE) controls both writing and reading
of the memory. A data byte allows Upper Byte (UB) and
Lower Byte (LB) access.
The IS61LV6416/IS61LV6416L is packaged in the JEDEC
standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin
mini BGA (6mm x 8mm).