IS61LV25616AL-10TLI简介

描述

ISSI IS61LV25616AL是一个高速，4194304位静态RAM，由16位组成262144个字。它是采用ISSI的高性能CMOS技术制造的。这种高度可靠的工艺加上创新的电路设计技术，产生高性能和低功耗的设备。当CE为HIGH(取消选择)时，器件处于待机模式，在此模式下，功耗可以随CMOS输入电平降低。通过使用芯片使能和输出使能输入，CE和OE，可以方便地扩展内存。活动的LOW写使能(WE)控制内存的写和读。一个数据字节允许访问UB (Upper byte)和LB (Lower byte)。IS61LV25616AL封装在JEDEC标准44针400-mil SOJ, 44针TSOP Type II, 44针LQFP和48针Mini BGA (8mm x 10mm)中。

IS61LV25616AL-10TLI

特性

•高速访问时间:- 10,12 ns

•CMOS低功耗操作

•待机功率低:-小于5ma(类型)CMOS备用

•TTL兼容的接口级别

•单3.3V电源

•完全静态操作:不需要时钟或刷新

•三状态输出

•上下字节的数据控制

•工业温度可用

•无铅可用

IS61LV25616AL-10TLI简介

DESCRIPTION 

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).

FEATURES

• High-speed access time:— 10, 12 ns

• CMOS low power operation

• Low stand-by power:— Less than 5 mA (typ.) CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refreshrequired

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available