TPS259270DRCR-4.5V to 18V, 28mΩ, 1A to 5A electronic fuses with drivers for external blocking of FETs

The TPS25927x series of electronic Fuses is a highly integrated circuit protection and power management solution in a small package. The device uses few external components and provides multiple protection modes. They can effectively prevent overload, short circuit, high surge current and reverse current. The current limit level can be set by a single external resistor. Applications with specific requirements for voltage ramps can use a single capacitor to set the dV/dT pins to ensure a suitable output slope. Many systems, such as SSDS, prohibit the backflow of stored capacitor energy through FET diodes into the step-down or short-circuited input bus. BFET pins are dedicated to this type of system. The external NFET can form a "back-to-back (B2B)" connection with the TPS25927x output, while the gate driven by the BFET prevents current from flowing back from the load to the power supply.

TPS25927x 系列电子熔丝是采用小型封装的高度集成电路保护和电源管理解决方案。该器件使用极少的外部组件并可提供多重保护模式。它们能够有效地防止过载、短路、过高浪涌电流和反向电流。电流限制级别可通过单个外部电阻设定。对于 电压斜坡有特别要求的应用可以通过单个电容器来设定 dV/dT 引脚，以确保合适的输出斜率。许多系统（例如 SSD）禁止将储存的电容能量通过 FET 二极管倒流到降压或短路输入总线。BFET 引脚专用于这类系统。外部 NFET 可与 TPS25927x 输出形成“背靠背 (B2B)”连接，而由 BFET 驱动的栅极可防止电流从负载流回电源。

FETInternal

Ron (Typ) (mΩ)28Vin (Min) (V)4.5Vin (Max) (V)18Vabsmax_cont (V)20Current limit (Min) (A)1Current limit (Max) (A)5Overcurrent responseCurrent limitingFault responseAuto-retry, Latch-offUL recognitionUL2367, UL60950

• 4.5V 至 18V 保护

• 集成 28mΩ 导通金属氧化物半导体场效应晶体管 (MOSFET)

• 最大绝对电压 20V

• 1A 至 5A 可调电流 ILIMIT

• ±8% ILIMIT 精度（3.7A 时）

• 支持反向电流阻断

• 可编程 OUT（输出）转换率，欠压闭锁 (UVLO)

• 内置热关断

• 通过 UL 2367 认证 – 文件编号 E339631*

• *RILIM ≤ 130 kΩ（最大电流 5A）

• 单点故障测试期间安全 (UL60950)

• 小型封装尺寸 - 10L (3mm x 3mm) 超薄小外形尺寸无引线封装 (VSON)

TPS259270DRCR-4.5V to 18V, 28mΩ, 1A to 5A electronic fuses with drivers for external blocking of FETs

The TPS25927x series of electronic Fuses is a highly integrated circuit protection and power management solution in a small package. The device uses few external components and provides multiple protection modes. They can effectively prevent overload, short circuit, high surge current and reverse current. The current limit level can be set by a single external resistor. Applications with specific requirements for voltage ramps can use a single capacitor to set the dV/dT pins to ensure a suitable output slope. Many systems, such as SSDS, prohibit the backflow of stored capacitor energy through FET diodes into the step-down or short-circuited input bus. BFET pins are dedicated to this type of system. The external NFET can form a "back-to-back (B2B)" connection with the TPS25927x output, while the gate driven by the BFET prevents current from flowing back from the load to the power supply.

TPS25927x 系列电子熔丝是采用小型封装的高度集成电路保护和电源管理解决方案。该器件使用极少的外部组件并可提供多重保护模式。它们能够有效地防止过载、短路、过高浪涌电流和反向电流。电流限制级别可通过单个外部电阻设定。对于 电压斜坡有特别要求的应用可以通过单个电容器来设定 dV/dT 引脚，以确保合适的输出斜率。许多系统（例如 SSD）禁止将储存的电容能量通过 FET 二极管倒流到降压或短路输入总线。BFET 引脚专用于这类系统。外部 NFET 可与 TPS25927x 输出形成“背靠背 (B2B)”连接，而由 BFET 驱动的栅极可防止电流从负载流回电源。

FETInternal

Ron (Typ) (mΩ)28Vin (Min) (V)4.5Vin (Max) (V)18Vabsmax_cont (V)20Current limit (Min) (A)1Current limit (Max) (A)5Overcurrent responseCurrent limitingFault responseAuto-retry, Latch-offUL recognitionUL2367, UL60950

• 4.5V 至 18V 保护

• 集成 28mΩ 导通金属氧化物半导体场效应晶体管 (MOSFET)

• 最大绝对电压 20V

• 1A 至 5A 可调电流 ILIMIT

• ±8% ILIMIT 精度（3.7A 时）

• 支持反向电流阻断

• 可编程 OUT（输出）转换率，欠压闭锁 (UVLO)

• 内置热关断

• 通过 UL 2367 认证 – 文件编号 E339631*

• *RILIM ≤ 130 kΩ（最大电流 5A）

• 单点故障测试期间安全 (UL60950)

• 小型封装尺寸 - 10L (3mm x 3mm) 超薄小外形尺寸无引线封装 (VSON)