代理ISSI高速异步静态存储器IS61LV6416-10TL(图片)与3.3V供电的（64*16）RAM民用级别

 ISSI 静态

 ISSI 静态 RAM 产品使用IS61LV6416-10TL高性能 CMOS 技术。 提供各种静态 RAM，其中包括 5V 高速异步 SRAM、高速低功率异步 SRAM、5V 低功率类型异步 SRAM、超低功率 CMOS 静态 RAM 和 PowerSaver^TM 低功率异步 SRAM。 ISSI SRAM 设备提供各种电压、存储器大小和不同的组织。 它们适用于以下应用，如 CPU 缓存、嵌入式处理器、硬盘和工业电子开关。

IS61LV6416-10TL电源：1.8V/3.3V/5V
IS61LV6416-10TL提供的封装：BGA、SOJ、SOP、sTSOP、TSOP
IS61LV6416-10TL提供的配置选择：x8 和 x16
IS61LV6416-10TLECC 功能可用于高速异步 SRAM

FEATURES  • High-speed access time: 8, 10, 12 ns  • CMOS low power operation  — 61LV6416:   75 mW (typical) operating current   0.5 mW (typical) standby current  — 61LV6416L:   65 mW (typical) operating current   50 µW (typical) standby current  • TTL compatible interface levels  • Single 3.3V power supply  • Fully static operation: no clock or refresh  required  • Three state outputs  • Data control for upper and lower bytes  • Industrial temperature available  • Lead-free available

The ISSI IS61LV6416/IS61LV6416L is a high-speed,  1,048,576-bit static RAM organized as 65,536 words by 16  bits. It is fabricated using ISSI's high-performance CMOS  technology. This highly reliable process coupled with  innovative circuit design techniques, yields access times  as fast as 8 ns with low power consumption.  When CE is HIGH (deselected), the device assumes a  standby mode at which the power dissipation can be  reduced down with CMOS input levels.  Easy memory expansion is provided by using Chip  Enable and Output Enable inputs, CE and OE. The active  LOW Write Enable (WE) controls both writing and reading  of the memory. A data byte allows Upper Byte (UB) and  Lower Byte (LB) access.  The IS61LV6416/IS61LV6416L is packaged in the JEDEC  standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin  mini BGA (6mm x 8mm).