代理ISSI高速异步静态存储器IS61LV12816L-10TL(图片)与3.3V供电的(128*16)RAM
编辑:宝星微科技 | 发布时间:2020-01-11 10:06 | 浏览次数:236
宝星微科技代理ISSI高速异步静态存储器IS61LV12816L-10TLI与3.3V供电的RAM,工业级-40-+85,数据更加稳定,(128*16)2M,高速高性价比低功耗,深圳常备现货,原装正品供应。
产品描述:The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.The IS61LV12816L is packaged in the JEDEC standard 44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm).
主要特点:
• High-speed access time: 8, 10 ns
• Operating Current: 50mA (typ.)
• Stand by Current: 700µA (typ.)
• TTL and CMOS compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
引脚定义:
深圳市宝星微科技有限公司 |
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