代理NETSOL韩国S6R4016V1A-UI10 Async FAST SRAM4M

宝星微科技代理NETSOL韩国S6R4016V1A-UI10低功耗高速 Async FAST SRAM，容量4M，供电3.0-3.6，封装TSOP44，价格优势，高性能，高性价比,可替换ISSI,LYONTEK,BSI,Cypress等等

Features
•  Fast Access Time 8, 10, 12, 15ns(Max)
•  CMOS Low Power Dissipation 
    Standby (TTL)     :  10mA (Max.) 
                 (CMOS)  :  6mA (Max.)
    Operating  : 35mA (8ns, Max.)
                        30mA (10ns, Max.)       
•  Single 3.3 ±0.3V or   5.0 ±0.5V Power  Supply                                            
- S6R40xxV1A : 3.3 ±0.3V Power Supply                            
- S6R40xxC1A : 5.0 ±0.5V Power Supply
• Wide range of Power Supply
          - S6R40xxW1A : 1.65V ~ 3.6V Power Supply
•  TTL Compatible Inputs and Outputs
•  Fully Static Operation, No Clock or Refresh required
•  Three State Outputs
•  Data Byte Control(x16 Mode)                                                       
LB : I/O0~ I/O7,  UB : I/O8~ I/O15
•  Standard 44TSOP2, 36FBGA and 48FBGA Package Pin
   Configuration
•  Operating in Commercial and Industrial Temperature range.

The S6R4016(V/C/W)1A  and  S6R4008(V/C/W))1A  are a4,194,304-bit high-speed Static Random Access Memory orga-nized as 256K (512K) words by 16(8) bits. The S6R4016(V/C/W)1A (S6R4008(V/C/W)1A) uses 16(8) common input and out-put  lines and have an output enable pin which operates  faster than  address  access  time  at  read  cycle.  And  S6R4016(V/C/W)1A allows  that  lower  and  upper  byte  access  by  data  byte control(UB,  LB).  The device  is  fabricated  using  advanced CMOS  process,6-TR  based  cell  technology  and  designed  for high-speed  circuit  technology.  It  is  particularly  well  suited  for use in high-density high-speed system applications. The S6R4016(V/W)1A  is packaged  in a 400mil 44-pin TSOP2and 48FBGA.The S6R4016C1A is packaged in a 400mil 44-pin TSOP2.The S6R4008(V/W)1A  is packaged  in a 400mil 44-pin TSOP2and 36FBGA.The S6R4008C1A is packaged in a 400mil 44-pin TSOP2.