代理NETSOL韩国 S6R4016W1A-UI10 Async FAST SRAM4M

宝星微科技代理NETSOL韩国S6R4016W1A-UI10低功耗高速 Async FAST SRAM，容量4M，供电3.0-3.6，封装TSOP44，价格优势，高性能，高性价比,可替换ISSI,LYONTEK,BSI,Cypress等等

Features
•  Fast Access Time 8, 10, 12, 15ns(Max)
•  CMOS Low Power Dissipation 
    Standby (TTL)     :  10mA (Max.) 
                 (CMOS)  :  6mA (Max.)
    Operating  : 35mA (8ns, Max.)
                        30mA (10ns, Max.)       
•  Single 3.3 ±0.3V or   5.0 ±0.5V Power  Supply                                            
- S6R40xxV1A : 3.3 ±0.3V Power Supply                            
- S6R40xxC1A : 5.0 ±0.5V Power Supply
• Wide range of Power Supply
          - S6R40xxW1A : 1.65V ~ 3.6V Power Supply
•  TTL Compatible Inputs and Outputs
•  Fully Static Operation, No Clock or Refresh required
•  Three State Outputs
•  Data Byte Control(x16 Mode)                                                       
LB : I/O0~ I/O7,  UB : I/O8~ I/O15
•  Standard 44TSOP2, 36FBGA and 48FBGA Package Pin
   Configuration
•  Operating in Commercial and Industrial Temperature range.

The S6R4016(V/C/W)1A  and  S6R4008(V/C/W))1A  are a4,194,304-bit high-speed Static Random Access Memory orga-nized as 256K (512K) words by 16(8) bits. The S6R4016(V/C/W)1A (S6R4008(V/C/W)1A) uses 16(8) common input and out-put  lines and have an output enable pin which operates  faster than  address  access  time  at  read  cycle.  And  S6R4016(V/C/W)1A allows  that  lower  and  upper  byte  access  by  data  byte control(UB,  LB).  The device  is  fabricated  using  advanced CMOS  process,6-TR  based  cell  technology  and  designed  for high-speed  circuit  technology.  It  is  particularly  well  suited  for use in high-density high-speed system applications. The S6R4016(V/W)1A  is packaged  in a 400mil 44-pin TSOP2and 48FBGA.The S6R4016C1A is packaged in a 400mil 44-pin TSOP2.The S6R4008(V/W)1A  is packaged  in a 400mil 44-pin TSOP2and 36FBGA.The S6R4008C1A is packaged in a 400mil 44-pin TSOP2.

特性

•快速访问时间8,10,12,15ns(最大)

•CMOS低功耗

待机(TTL): 10mA(最大)

(CMOS): 6mA (Max.)

操作:35mA (8ns，最大)

30mA (10ns，最大)

•单路3.3±0.3V或5.0±0.5V电源

- S6R40xxV1A: 3.3±0.3V电源

- S6R40xxC1A: 5.0±0.5V电源

•广泛的电源供应

- S6R40xxW1A: 1.65V ~ 3.6V电源

•TTL兼容输入和输出

•完全静态操作，无需时钟或刷新

•三种状态输出

•数据字节控制(x16模式)

Lb: i / 0~ i / o7, ub: i / o8 ~ i / o15

•标准44TSOP2, 36FBGA和48FBGA封装引脚

配置

•在商业和工业温度范围内运行。

S6R4016(V/C/W)1A和S6R4008(V/C/W) 1A是一个4,194,304位高速静态随机存取存储器，由16(8)位组成为256K (512K)字。S6R4016(V/C/W)1A (S6R4008(V/C/W)1A)使用16(8)个公共输入和输出线，并具有一个输出使能引脚，其在读取周期的操作速度比地址访问时间快。S6R4016(V/C/W)1A允许通过数据字节控制(UB, LB)对上下字节进行访问。该器件采用先进的CMOS工艺、基于6-TR的电池技术制造，专为高速电路技术而设计。它特别适合用于高密度高速系统应用。S6R4016(V/W)1A封装在400mil 44引脚tsop2和48FBGA中。S6R4016C1A封装在400mil 44引脚TSOP2中。S6R4008(V/W)1A封装在400mil 44引脚tsop2和36FBGA中。S6R4008C1A封装在400mil 44引脚TSOP2中。