FM25L16B-GTR

The FM25L16B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the FM25L16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25L16B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25L16B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25L16B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The FM25L16B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device specifications are guaranteed over an industrial temperature range of-40°C to +85°C

FM25L16B-GTR

FM25L16B是采用先进铁电工艺的16 kbit非易失性存储器。铁电随机存取存储器或F-RAM是非易失性的，其读写操作与RAM类似。它提供了151年的可靠数据保留，同时消除了由串行闪存、EEPROM和其他非易失性存储器引起的复杂性、开销和系统级可靠性问题。与串行闪存和EEPROM不同，FM25L16B以总线速度执行写入操作。无写延迟。在每个字节成功地传输到设备后，数据立即写入存储器阵列。下一个总线周期可以开始，而不需要数据轮询。此外，与其他非易失性存储器相比，该产品提供了实质性的写入持久性。FM25L16B能够支持1014个读/写周期，比EEPROM多1亿倍的写周期。这些功能使FM25L16B成为需要频繁或快速写入的非易失性存储器应用的理想选择。例如，从数据收集(其中写入周期的数量可能至关重要)到要求苛刻的工业控制(其中串行闪存或EEPROM的长写入时间可能导致数据丢失)。FM25L16B为串行EEPROM或闪存用户提供了实质性的好处，作为硬件的替代产品。FM25L16B采用高速SPI总线，增强了F-RAM技术的高速写入能力。该设备的规格保证在工业温度范围为-40°C至+85°C