GLS29EE010-70-4C-EHE

特性

•单电压读写操作

- 4.5-5.5V用于GLS29EE010

•卓越的可靠性

-续航:100,000次(典型)

—数据保留时间大于100年

•低功耗

-有效电流:20ma(典型)5V和

10ma(典型)2.7V

—待机电流:10µA(典型)

•快速写页操作

- 128字节每页，1024页

-写页周期:5毫秒(典型)

完成内存重写:5秒(典型)

-有效写字节周期时间:39µs(典型)

•快速读访问时间

- 4.5-5.5V工作:70和90ns

- 2.7-3.6V工作:150和200 ns

•锁存地址和数据

•自动写定时

-内部VPP生成

•写检测结束

-开关位

-数据#轮询

•硬件和软件数据保护

•产品标识可通过以下方式访问

软件操作

•TTL I/O兼容性

•JEDEC标准

- Flash EEPROM引脚和命令集

•可用的软件包

- 32导联plc

- 32导联TSOP (8mm × 14mm, 8mm × 20mm)

- 32针PDIP

•所有非pb(无铅)设备都符合RoHS标准

GLS29EE010-70-4C-EHE

FEATURES:

• Single Voltage Read and Write Operations

– 4.5-5.5V for GLS29EE010

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical) for 5V and

10 mA (typical) for 2.7V

– Standby Current: 10 µA (typical)

• Fast Page-Write Operation

– 128 Bytes per Page, 1024 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

• Fast Read Access Time

– 4.5-5.5V operation: 70 and 90 ns

– 2.7-3.6V operation: 150 and 200 ns

• Latched Address and Data

• Automatic Write Timing

– Internal VPP Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• Product Identification can be accessed via

Software Operation

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)

– 32-pin PDIP

• All non-Pb (lead-free) devices are RoHS compliant