GLS29EE512-70-4C-NHE

FEATURES:

• Single Voltage Read and Write Operations

– 4.5-5.5V for GLS29EE512

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

• Fast Page-Write Operation

– 128 Bytes per Page, 512 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 2.5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

• Fast Read Access Time

– 4.5-5.5V operation: 70 ns

• Latched Address and Data

• Automatic Write Timing

– Internal VPP Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• Product Identification can be accessed via

Software Operation

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 20mm)

– 32-pin PDIP

• All non-Pb (lead-free) devices are RoHS compliant

GLS29EE512-70-4C-NHE

FEATURES:

• Single Voltage Read and Write Operations

– 4.5-5.5V for GLS29EE512

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

• Fast Page-Write Operation

– 128 Bytes per Page, 512 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 2.5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

• Fast Read Access Time

– 4.5-5.5V operation: 70 ns

• Latched Address and Data

• Automatic Write Timing

– Internal VPP Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• Product Identification can be accessed via

Software Operation

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 20mm)

– 32-pin PDIP

• All non-Pb (lead-free) devices are RoHS compliant