The SST 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SST25VF064C SPI serial flash memory is manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

For EOL Notification, click here.
For Migration Document to SST26VF064B, click here.

Please consider this device SST26VF064B, SST26VF064BA

Additional Features

• Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3

• Dual Input/Output Support

• Flexible Erase Capability: Uniform 4 KByte sectors, Uniform 32 KByte overlay blocks, Uniform 64 KByte overlay blocks

• Low Power Consumption: Active Read Current: 12 mA (typical @ 80 MHz, Standby Current: 5 µA (typical)

• Fast Erase and Page-Program: Chip-Erase Time: 35 ms (typical), Sector-/Block-Erase Time: 18 ms (typical), Page-Program Time: 1.5ms (typical)

• Packages Available: 16-lead SOIC (300 mils), 8-contact WSON (6mm x 8mm)

• All devices are RoHS compliant

The SST 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SST25VF064C SPI serial flash memory is manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

For EOL Notification, click here.
For Migration Document to SST26VF064B, click here.

Please consider this device SST26VF064B, SST26VF064BA

Additional Features

• Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3

• Dual Input/Output Support

• Flexible Erase Capability: Uniform 4 KByte sectors, Uniform 32 KByte overlay blocks, Uniform 64 KByte overlay blocks

• Low Power Consumption: Active Read Current: 12 mA (typical @ 80 MHz, Standby Current: 5 µA (typical)

• Fast Erase and Page-Program: Chip-Erase Time: 35 ms (typical), Sector-/Block-Erase Time: 18 ms (typical), Page-Program Time: 1.5ms (typical)

• Packages Available: 16-lead SOIC (300 mils), 8-contact WSON (6mm x 8mm)

• All devices are RoHS compliant