The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features

• Single Voltage Read and Write Operations– 2.7-3.6V

• Serial Interface Architecture

• Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)

• Superior Reliability

• Endurance: 100,000 Cycles (typical)

• Greater than 100 years Data Retention

• Low Power Consumption:

• Program & Erase Current: 30mA (max)

• Active Read Current: 10 mA (typical)

• Standby Current: 5 µA (typical)

• Flexible Erase Capability

• Uniform 4 KByte sectors

• Uniform 32 KByte & 64 KByte overlay blocks

• Fast Erase and Byte-Program:

• Chip-Erase Time: 35 ms (typical)

• Sector-/Block-Erase Time: 18 ms (typical)

• Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming

• Decrease total chip programming time over Byte-Program operations

• End-of-Write Detection

• Software polling the BUSY bit in Status Register

• Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#)

• Suspends a serial sequence to the memory without deselecting the device

• Write Protection (WP#)

• Enables/Disables the Lock-Down function of the status register

• Software Write Protection

• Write protection through Block-Protection bits in the status register

• Temperature Range

• Commercial: 0°C to +70°C

• Industrial: -40°C to +85°C

• Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP

• All devices are RoHS compliant

The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features

• Single Voltage Read and Write Operations– 2.7-3.6V

• Serial Interface Architecture

• Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)

• Superior Reliability

• Endurance: 100,000 Cycles (typical)

• Greater than 100 years Data Retention

• Low Power Consumption:

• Program & Erase Current: 30mA (max)

• Active Read Current: 10 mA (typical)

• Standby Current: 5 µA (typical)

• Flexible Erase Capability

• Uniform 4 KByte sectors

• Uniform 32 KByte & 64 KByte overlay blocks

• Fast Erase and Byte-Program:

• Chip-Erase Time: 35 ms (typical)

• Sector-/Block-Erase Time: 18 ms (typical)

• Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming

• Decrease total chip programming time over Byte-Program operations

• End-of-Write Detection

• Software polling the BUSY bit in Status Register

• Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#)

• Suspends a serial sequence to the memory without deselecting the device

• Write Protection (WP#)

• Enables/Disables the Lock-Down function of the status register

• Software Write Protection

• Write protection through Block-Protection bits in the status register

• Temperature Range

• Commercial: 0°C to +70°C

• Industrial: -40°C to +85°C

• Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP

• All devices are RoHS compliant