The SST39SF040 is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

Additional Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)

• Sector-Erase Capability– Uniform 4 KByte sectors

• Fast Read Access Time:– 55 ns– 70 ns

• Latched Address and Data

• Automatic Write Timing– Internal VPP Generation

• Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040

• End-of-Write Detection– Toggle Bit– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard– Flash EEPROM Pinouts and command sets

• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP

• All devices are RoHS compliant

• All non-Pb (lead-free) devices are RoHS compliant

The SST39SF040 is a CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.

Additional Features

• Organized as 128K x8 / 256K x8 / 512K x8

• Single 4.5-5.5V Read and Write Operations

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)

• Sector-Erase Capability– Uniform 4 KByte sectors

• Fast Read Access Time:– 55 ns– 70 ns

• Latched Address and Data

• Automatic Write Timing– Internal VPP Generation

• Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040

• End-of-Write Detection– Toggle Bit– Data# Polling

• TTL I/O Compatibility

• JEDEC Standard– Flash EEPROM Pinouts and command sets

• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP

• All devices are RoHS compliant

• All non-Pb (lead-free) devices are RoHS compliant