The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.

Additional Features

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for SST39VF512/010/020/040

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)

• Sector-Erase Capability– Uniform 4 KByte sectors

• Fast Read Access Time: 45 ns ; 55 ns ; 70 ns

• Latched Address and Data

• Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:4 seconds (typical) for SST39LF/VF020

• Automatic Write Timing– Internal VPP Generation

• End-of-Write Detection– Toggle Bit– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard– Flash EEPROM Pinouts and command sets

• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M

• All devices are RoHS compliant

The SST39VF040 is a 5124K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.SST39VF040是一款5124K x8CMOS多用途闪存(MPF)，采用SST专有的高性能CMOS SuperFlash技术制造。与其他方法相比，分栅单元设计和厚氧化物隧道喷射器具有更好的可靠性和可制造性。SST39VF040器件写入(程序或擦除)与2.7-3.6V电源。该器件符合JEDEC标准引脚的x8存储器。

附加功能  

组织为64K x8 / 128K x8 / 256K x8 / 512K x8 

单电压读写操作- 3.0-3.6V用于SST39LF512/010/020/040 - 2.7-3.6V用于SST39VF512/010/020/040 

高可靠性—耐久性:100,000次循环(典型)—数据保留时间大于100年 

低功耗(典型值为14mhz)—工作电流:5ma(典型)—待机电流:1µA(典型) 

扇区擦除能力-统一的4kbyte扇区 

快速读访问时间:45 ns;55ns;70纳秒 

锁存地址和数据 

快速擦除和字节程序:-扇区擦除时间:18 ms(典型)-芯片擦除时间:70 ms(典型)-字节程序时间:14µs(典型)-芯片重写时间:4秒(典型)为SST39LF/VF020 

自动写定时-内部VPP的产生 

写结束检测-切换位-数据#轮询 

CMOS I/O兼容性 

JEDEC标准-闪存EEPROM引脚和命令集 

封装可用- 32引脚PLCC - 32引脚TSOP (8mm x 14mm) - 48球TFBGA (6mm x 8mm) - 34球WFBGA (4mm x 6mm)用于1M和2M 

所有设备均符合RoHS标准