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SST39VF512-70-4C-WHE您现在的位置：首 页 > SST39VF512-70-4C-WHE
| SST39VF512-70-4C-WHE | |
| 宝星微库存：3500 PCS | |
| 厂商： SST | |
| 封装： TSOP | |
| 年份： 1024034+ | |
| 备注： 只供应原装正品 | |
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SST39VF512
Status: End of Life
Features:
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Low Power Consumption – Active Current: 5 mA (typical) – Standby Current: 1 µA (typical)
Sector-Erase Capability – Uniform 4 KByte sectors
Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST39LF/VF512
Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 48-ball TFBGA (6mm x 8mm) All non-Pb(lead-free) devices are RoHS compliant
Summary
The SST39VF512 is a 64K x8CMOS Multi-Purpose Flash (MPF) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF512 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.
Additional Features
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
Low Power Consumption– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)
Sector-Erase Capability– Uniform 4 KByte sectors
Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF512
Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)All non-Pb(lead-free) devices are RoHS compliant
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