W25N01GVZEIG

The W25N01GV (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with limited space, pins and power. The W25N SpiFlash family incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 25mA active and 10µA for standby. All W25N SpiFlash family devices are offered in space-saving packages which were impossible to use in the past for the typical NAND flash memory. The W25N01GV 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes each. The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pages can be erased in groups of 64 (128KB block erase). The W25N01GV has 1,024 erasable blocks. The W25N01GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. The W25N01GV provides a new Continuous Read Mode that allows for efficient access to the entire memory array with a single Read command. This feature is ideal for code shadowing applications. A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash memory manageability, user configurable internal ECC, bad block management are also available in W25N01GV.

W25N01GV（1G位）串行SLC NAND闪存为具有

有限的空间、引脚和电源。W25N SpiFlash系列集成了流行的SPI接口和

传统的大NAND非易失性存储器空间。它们非常适合将代码隐藏到RAM，执行

直接来自双/四路SPI（XIP）的代码，并存储语音、文本和数据。该设备在单个设备上运行

2.7V至3.6V电源，有源功耗低至25mA，备用功耗低至10µA。所有W25N

SpiFlash系列设备采用节省空间的封装，在过去是不可能使用的

典型的NAND闪存。

W25N01GV 1G位存储器阵列被组织成65536个可编程页面，每个页面2048字节。

使用来自2048字节内部缓冲器的数据，可以一次对整个页面进行编程。页

可以以64个为一组的方式擦除（128KB块擦除）。W25N01GV具有1024个可擦除块。

W25N01GV支持标准串行外围接口（SPI）、双/四路I/O SPI：串行时钟、，

芯片选择、串行数据I/O 0（DI）、I/O 1（DO）、I/O 2（/WP）和I/O 3（/HOLD）。SPI时钟频率高达

支持104MHz，允许双I/O和416MHz的等效时钟速率为208MHz（104MHz x 2）

使用快速读取双/四路I/O指令时，用于四路I/O（104MHz x 4）。

W25N01GV提供了一种新的连续读取模式，可有效访问整个

具有单个读取命令的内存阵列。此功能非常适合代码阴影应用程序。

保持引脚、写入保护引脚和可编程写入保护，提供了进一步的控制灵活性。

此外，该设备支持JEDEC标准制造商和设备ID，一个2048字节的唯一ID

页面、一个2048字节参数页面和十个2048字节OTP页面。提供更好的NAND闪存

内存可管理性、用户可配置的内部ECC、坏块管理也可在W25N01GV。

 New W25N Family of SpiFlash Memories – W25N01GV: 1G-bit / 128M-byte – Standard SPI: CLK, /CS, DI, DO, /WP, /Hold – Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3 – Compatible SPI serial flash commands  Highest Performance Serial NAND Flash – 104MHz Standard/Dual/Quad SPI clocks – 208/416MHz equivalent Dual/Quad SPI – 50MB/S continuous data transfer rate – Fast Program/Erase performance – More than 100,000 erase/program cycles(4) – More than 10-year data retention  Efficient “Continuous Read Mode”(1) – Alternative method to the Buffer Read Mode – No need to issue “Page Data Read” between Read commands – Allows direct read access to the entire array  Low Power, Wide Temperature Range – Single 2.7 to 3.6V supply – 25mA active, 10µA standby current – -40°C to +85/105°C operating range  Flexible Architecture with 128KB blocks – Uniform 128K-Byte Block Erase – Flexible page data load methods  Advanced Features – On chip 1-Bit ECC for memory array – ECC status bits indicate ECC results – bad block management and LUT(2) access – Software and Hardware Write-Protect – Power Supply Lock-Down and OTP protection – 2KB Unique ID and 2KB parameter pages – Ten 2KB OTP pages(3)  Space Efficient Packaging – 8-pad WSON 8x6-mm – 16-pin SOIC 300-mil – 24-ball TFBGA 8x6-mm – Contact Winbond for other package options Notes: 1. Only the Read command structures are different between the “Continuous Read Mode (BUF=0)” and the “Buffer Read Mode (BUF=1)”, all other commands are identical. W25N01GVxxxG/R: Default BUF=1 after power up W25N01GVxxxT: Default BUF=0 after power up 2. LUT stands for Look-Up Table. 3. OTP pages can only be programmed. 4. Endurance specification is based on the on-chip ECC or 1bit/528 byte ECC(Error Correcting Code)

 新型W25N系列SpiFlash存储器

–W25N01GV:1G位/128M字节

–标准SPI：CLK、/CS、DI、DO、/WP，

/保持

–双SPI：CLK、/CS、IO0、IO1、/WP、/Hold

–四路SPI：CLK、/CS、IO0、IO1、IO2、IO3

–兼容SPI串行闪存命令

 最高性能串行NAND闪存

–104MHz标准/双/四SPI时钟

–208/416MHz等效双/四路SPI

–50MB/S连续数据传输速率

–快速编程/擦除性能

–超过100000个擦除/编程周期（4）

–超过10年的数据保留期

 高效的“连续读取模式”（1）

–缓冲区读取的替代方法

模式

–无需发布“页面数据读取”

在读取命令之间

–允许直接读取整个

大堆

 低功率、宽温度范围

–单个2.7至3.6V电源

–25mA有源，10µA备用电流

–-40°C至+85/105°C工作范围

 具有128KB块的灵活架构

–统一128K字节块擦除

–灵活的页面数据加载方法

 高级功能

–用于存储器阵列的片上1位ECC

–ECC状态位指示ECC结果

–坏块管理和LUT（2）访问

–软件和硬件写保护

–电源锁定和OTP保护

–2KB唯一ID和2KB参数页面

–10个2KB OTP页面（3）

 节省空间的包装

–8垫片WSON 8x6毫米

–16引脚SOIC 300密耳

–24球TFBGA 8x6毫米

–联系Winbond了解其他套餐选项

笔记：

1.只有读取命令结构在

“连续读取模式（BUF=0）”和“缓冲区

读取模式（BUF=1）”，所有其他命令都相同。

W25N01GVxxxG/R：通电后默认BUF=1

W25N01GVxxxT：通电后默认BUF=0

2.LUT代表查找表。

3.只能对OTP页面进行编程。

4.耐久性规范基于片上ECC或

1位/528字节ECC（纠错码）

W25N01GVZEIG

The W25N01GV (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with limited space, pins and power. The W25N SpiFlash family incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 25mA active and 10µA for standby. All W25N SpiFlash family devices are offered in space-saving packages which were impossible to use in the past for the typical NAND flash memory. The W25N01GV 1G-bit memory array is organized into 65,536 programmable pages of 2,048-bytes each. The entire page can be programmed at one time using the data from the 2,048-Byte internal buffer. Pages can be erased in groups of 64 (128KB block erase). The W25N01GV has 1,024 erasable blocks. The W25N01GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. The W25N01GV provides a new Continuous Read Mode that allows for efficient access to the entire memory array with a single Read command. This feature is ideal for code shadowing applications. A Hold pin, Write Protect pin and programmable write protection, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash memory manageability, user configurable internal ECC, bad block management are also available in W25N01GV.

W25N01GV（1G位）串行SLC NAND闪存为具有

有限的空间、引脚和电源。W25N SpiFlash系列集成了流行的SPI接口和

传统的大NAND非易失性存储器空间。它们非常适合将代码隐藏到RAM，执行

直接来自双/四路SPI（XIP）的代码，并存储语音、文本和数据。该设备在单个设备上运行

2.7V至3.6V电源，有源功耗低至25mA，备用功耗低至10µA。所有W25N

SpiFlash系列设备采用节省空间的封装，在过去是不可能使用的

典型的NAND闪存。

W25N01GV 1G位存储器阵列被组织成65536个可编程页面，每个页面2048字节。

使用来自2048字节内部缓冲器的数据，可以一次对整个页面进行编程。页

可以以64个为一组的方式擦除（128KB块擦除）。W25N01GV具有1024个可擦除块。

W25N01GV支持标准串行外围接口（SPI）、双/四路I/O SPI：串行时钟、，

芯片选择、串行数据I/O 0（DI）、I/O 1（DO）、I/O 2（/WP）和I/O 3（/HOLD）。SPI时钟频率高达

支持104MHz，允许双I/O和416MHz的等效时钟速率为208MHz（104MHz x 2）

使用快速读取双/四路I/O指令时，用于四路I/O（104MHz x 4）。

W25N01GV提供了一种新的连续读取模式，可有效访问整个

具有单个读取命令的内存阵列。此功能非常适合代码阴影应用程序。

保持引脚、写入保护引脚和可编程写入保护，提供了进一步的控制灵活性。

此外，该设备支持JEDEC标准制造商和设备ID，一个2048字节的唯一ID

页面、一个2048字节参数页面和十个2048字节OTP页面。提供更好的NAND闪存

内存可管理性、用户可配置的内部ECC、坏块管理也可在W25N01GV。

 New W25N Family of SpiFlash Memories – W25N01GV: 1G-bit / 128M-byte – Standard SPI: CLK, /CS, DI, DO, /WP, /Hold – Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3 – Compatible SPI serial flash commands  Highest Performance Serial NAND Flash – 104MHz Standard/Dual/Quad SPI clocks – 208/416MHz equivalent Dual/Quad SPI – 50MB/S continuous data transfer rate – Fast Program/Erase performance – More than 100,000 erase/program cycles(4) – More than 10-year data retention  Efficient “Continuous Read Mode”(1) – Alternative method to the Buffer Read Mode – No need to issue “Page Data Read” between Read commands – Allows direct read access to the entire array  Low Power, Wide Temperature Range – Single 2.7 to 3.6V supply – 25mA active, 10µA standby current – -40°C to +85/105°C operating range  Flexible Architecture with 128KB blocks – Uniform 128K-Byte Block Erase – Flexible page data load methods  Advanced Features – On chip 1-Bit ECC for memory array – ECC status bits indicate ECC results – bad block management and LUT(2) access – Software and Hardware Write-Protect – Power Supply Lock-Down and OTP protection – 2KB Unique ID and 2KB parameter pages – Ten 2KB OTP pages(3)  Space Efficient Packaging – 8-pad WSON 8x6-mm – 16-pin SOIC 300-mil – 24-ball TFBGA 8x6-mm – Contact Winbond for other package options Notes: 1. Only the Read command structures are different between the “Continuous Read Mode (BUF=0)” and the “Buffer Read Mode (BUF=1)”, all other commands are identical. W25N01GVxxxG/R: Default BUF=1 after power up W25N01GVxxxT: Default BUF=0 after power up 2. LUT stands for Look-Up Table. 3. OTP pages can only be programmed. 4. Endurance specification is based on the on-chip ECC or 1bit/528 byte ECC(Error Correcting Code)

 新型W25N系列SpiFlash存储器

–W25N01GV:1G位/128M字节

–标准SPI：CLK、/CS、DI、DO、/WP，

/保持

–双SPI：CLK、/CS、IO0、IO1、/WP、/Hold

–四路SPI：CLK、/CS、IO0、IO1、IO2、IO3

–兼容SPI串行闪存命令

 最高性能串行NAND闪存

–104MHz标准/双/四SPI时钟

–208/416MHz等效双/四路SPI

–50MB/S连续数据传输速率

–快速编程/擦除性能

–超过100000个擦除/编程周期（4）

–超过10年的数据保留期

 高效的“连续读取模式”（1）

–缓冲区读取的替代方法

模式

–无需发布“页面数据读取”

在读取命令之间

–允许直接读取整个

大堆

 低功率、宽温度范围

–单个2.7至3.6V电源

–25mA有源，10µA备用电流

–-40°C至+85/105°C工作范围

 具有128KB块的灵活架构

–统一128K字节块擦除

–灵活的页面数据加载方法

 高级功能

–用于存储器阵列的片上1位ECC

–ECC状态位指示ECC结果

–坏块管理和LUT（2）访问

–软件和硬件写保护

–电源锁定和OTP保护

–2KB唯一ID和2KB参数页面

–10个2KB OTP页面（3）

 节省空间的包装

–8垫片WSON 8x6毫米

–16引脚SOIC 300密耳

–24球TFBGA 8x6毫米

–联系Winbond了解其他套餐选项

笔记：

1.只有读取命令结构在

“连续读取模式（BUF=0）”和“缓冲区

读取模式（BUF=1）”，所有其他命令都相同。

W25N01GVxxxG/R：通电后默认BUF=1

W25N01GVxxxT：通电后默认BUF=0

2.LUT代表查找表。

3.只能对OTP页面进行编程。

4.耐久性规范基于片上ECC或

1位/528字节ECC（纠错码）