SST25VF020B

2Mb 2.7-3.6V SPI Serial Flash

Status: In Production

Features:

• Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)

• Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations

•  

• Additional Features

• Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)

• Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations

• Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (6mm x 5mm)      -  8-contact TDFN (2mm x 3mm)

• All non-Pb (lead-free) devices are RoHS compliant

SST25VF020B

2Mb2.7-3.6V SPI

串行Flash 现状：正在生产

查看数据表 特色： 串行接口体系结构-SPI兼容：模式0和模式3 优越的可靠性-耐力：100，000周期（典型）-大于100年的数据保留 低功耗：-有源读取电流：10mA（典型）-备用电流：5μA（典型） 柔性擦除能力-统一4KByte扇区-统一32KByte覆盖块-统一64KByte覆盖块 快速擦除和字节-程序：-芯片擦除时间：35ms（典型）-扇区/锁定-擦除时间：18ms（典型）-字节-程序时间：7μs（典型） 自动地址增量（AAI）编程-减少总芯片编程时间超过Byte-Program操作

25系列串行闪存系列具有四线、SPI兼容接口，允许低管脚数封装，占用更少的板空间，并最终降低系统总成本。SST25VF020B设备得到了增强，工作频率提高，功耗更低。SST2 5VF020B SPI串行闪存采用SST专有的高性能CMOS超闪存技术制造。与替代方法相比，分裂栅单元设计和厚氧化物隧道注入器获得更好的可靠性和可制造性。

附加功能

串行接口架构-SPI兼容：模式0和模式3

卓越的可靠性-耐久性：100000次循环（典型）-超过100年的数据保留

低功耗：–有效读取电流：10毫安（典型）-待机电流：5微安（典型）

灵活的擦除能力-统一的4字节扇区-统一32字节叠加块-统一64千字节覆盖块

快速擦除和字节程序：–芯片擦除时间：35毫秒（典型）–扇区/块擦除时间：18毫秒（典型）–字节程序时间：7微秒（典型）自动地址增量（AAI）编程-减少芯片编程总时间超字节程序操作

提供的包装:–8-SOIC（150 mils）–8-WSON（6mm x 5mm）–8-TDFN（2mm x 3mm）

所有非铅（无铅）设备均符合RoHS标准

 SST25VF020B

2Mb 2.7-3.6V SPI Serial Flash

Status: In Production

Features:

• Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)

• Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations

•  

• Additional Features

• Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3

• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention

• Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)

• Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations

• Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (6mm x 5mm)      -  8-contact TDFN (2mm x 3mm)

• All non-Pb (lead-free) devices are RoHS compliant