SST25VF512A-33-4C-SAE概述

SST的串行闪存系列具有四线、SPI兼容接口，允许占用较少板空间的低管脚数封装，并最终降低系统总成本。SST25VF512A SPI串行闪存采用SST专有的高性能CMOS超闪存技术制造。与替代方法相比，分裂栅单元设计和厚氧化物隧道注入器获得更好的可靠性和可制造性。

SST25VF512A-33-4C-SAE附加功能

串行接口架构-SPI兼容：模式0和模式3

低功耗：–有效读取电流：7毫安（典型）-待机电流：8微安（典型）灵活的擦除能力-统一4字节扇区-统一32字节叠加块

快速擦除和字节程序：–芯片擦除时间：70毫秒（典型）–扇区或块擦除时间：18毫秒（典型）–字节程序时间：14微秒（典型）

自动地址增量（AAI）编程-减少字节程序操作的芯片编程总时间

提供包装-8-铅SOIC 150 mil车身宽度-8-接触式传感器（5mm x 6mm）

SST25VF512A-33-4C-SAE均符合RoHS标准

Device Overview

Summary

SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512A SPI serial flash memory is manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features

Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3

Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)

Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks

Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)

Auto Address Increment (AAI) Programming– Decrease total chip programming time over Byte-Program operations

Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm)

All non-Pb (lead-free) devices are RoHS compliant