LY625128SL-55LL

5伏 512k x 8位高速cmos sram

LY615128是一个4,194,304位低功耗CMOS静态随机存取存储器，由8位组成524,288字。它是采用非常高性能，高可靠性的CMOS技术制造的。其待机电流在工作温度范围内稳定。

LY615128专为低功耗应用而设计，特别适合电池备用非易失性存储器应用。LY615128通过5V的单电源工作，所有输入和输出都完全兼容TTL。

The LY615128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits.  It is fabricated using very high performance, high reliability CMOS technology.  Its standby current is stable within the range of operating temperature.

The LY615128 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.  The LY615128 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible.

LY625128SL-55LL

5伏 512k x 8位高速cmos sram

LY615128是一个4,194,304位低功耗CMOS静态随机存取存储器，由8位组成524,288字。它是采用非常高性能，高可靠性的CMOS技术制造的。其待机电流在工作温度范围内稳定。

LY615128专为低功耗应用而设计，特别适合电池备用非易失性存储器应用。LY615128通过5V的单电源工作，所有输入和输出都完全兼容TTL。

The LY615128 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits.  It is fabricated using very high performance, high reliability CMOS technology.  Its standby current is stable within the range of operating temperature.

The LY615128 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.  The LY615128 operates from a single power supply of 5V and all inputs and outputs are fully TTL compatible.