最新到货2020年IS61LV25616AL-10TL高速低功耗SRAM

编辑:宝星微科技 | 发布时间:2020-05-08 15:15 | 浏览次数：289

tr}6{/attr}>宝星微科技专业代理ISSI全系列高速低功耗SRAM和低、中密度DRAM存储器,深圳有现货,交期快,原厂原装货,可提供技术支持IS61LV25616AL-10TL主要应用：汽车电子，通信网络，数码消费类电子产品，工业和医疗设备等等,IS61LV25616AL-10TL是一款4M(256*16)高速{attr}1064{/attr}SRAM,TSOP44封装，工作电压3.3V，耐高温度85℃，耐低温度-40℃，储存容量4M(256*16),标准包装1350，标准托盘135，最新2020年现货供应，需了解更多资料请联系在线客服。

,IS61LV25616AL-10TL简介

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technol-ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.The IS61LV25616AL is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10mm).

,IS61LV25616AL-10TL参数

• High-speed access time:

— 10, 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available

IS61LV25616AL-10TL高清图，细节图，原装现货供应.

IS61LV25616AL-10TL