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SST39VF1601-70-4C-B3KE |
宝星微库存:9000 PCS
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厂商:
SST
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封装:
BGA
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年份:
2019+
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备注:
只供应原装正品
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PDF:
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SST39VF1601
Features:
Organized as 1M x16: SST39VF1601/1602
Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Chip-Erase Capability
Summary
*Not Recommended for New Design*
The SST39VF1601 device is 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Organized as 1M x16: SST39VF1601/1602
Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature– SST: 128 bits; User: 128 bits
Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)
All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Op. Volt Range (V)
2.7 to 3.6
Temp Range (°C)
-40°C to +85°C
SST39VF1601
Features:
Organized as 1M x16: SST39VF1601/1602
Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Chip-Erase Capability
Summary
*Not Recommended for New Design*
The SST39VF1601 device is 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.
Organized as 1M x16: SST39VF1601/1602
Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602– Bottom Block-Protection (bottom 32 KWord)for SST39VF1601
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature– SST: 128 bits; User: 128 bits
Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)
All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Op. Volt Range (V)
2.7 to 3.6
Temp Range (°C)
-40°C to +85°C