64Mb 2.7-3.6V Parallel Flash
Status: In Production
Features:
Organized as 4M x16
Single Voltage Read and Write Operations – 2.7-3.6V
Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 32 KWord) for SST39VF6402B – Bottom Block-Protection (bottom 32 KWord) for SST39VF6401B
Sector-Erase Capability – Uniform 2 KWord sectors
Summary
The SST39VF6401B device is a 4M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF6401B writes (Program or Erase) with a 2.7-3.6V power supply. This devices conforms to JEDEC standard pinouts for x16 memories and is command set compatible with Flash devices that support the AMD/Spansion command set, enabling customers to save time and resources in implementation.
Additional Features
Organized as 4M x16
Single Voltage Read and Write Operations– 2.7-3.6V
Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF6402B– Bottom Block-Protection (bottom 32 KWord)for SST39VF6401B
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature– SST: 128 bits; User: 128 bits
Fast Read Access Time:– 70 ns– 90 ns
Latched Address and Data
Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bits– Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pin Assignments– Software command sequence compatibility- Address format is 11 bits, A10-A0- Block-Erase 6th Bus Write Cycle is 30H- Sector-Erase 6th Bus Write Cycle is 50H
Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (8mm x 10mm)
All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Temp Range (°C)
-40°C to +85°C
SST39VF6401B
64Mb 2.7-3.6V Parallel Flash
Status: In Production
Features:
Organized as 4M x16
Single Voltage Read and Write Operations – 2.7-3.6V
Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 32 KWord) for SST39VF6402B – Bottom Block-Protection (bottom 32 KWord) for SST39VF6401B
Sector-Erase Capability – Uniform 2 KWord sectors
产品特点
组织为 4M x16
单电压读写操作 – 2.7-3.6V
卓越的可靠性 – 耐用性:100,000 次循环(典型值) – 超过 100 年的数据保留
低功耗(5 MHz 时的典型值) – 活动电流:9 mA(典型值) – 待机电流:3 µA(典型值) – 自动低功耗模式:3 µA(典型值)
硬件块保护/WP# 输入引脚 – SST39VF6402B 的顶部块保护(顶部 32 KWord) – SST39VF6401B 的底部块保护(底部 32 KWord)
扇区擦除能力——统一 2 KWord 扇区
块擦除能力——统一的 32 KWord 块
全片擦除能力
擦除暂停/擦除恢复功能
硬件复位引脚 (RST#)
安全 ID 功能 – SST:128 位;用户:128 位
快速读取访问时间:– 70 ns – 90 ns
锁存地址和数据
快速擦除和字编程: – 扇区擦除时间:18 ms(典型值) – 块擦除时间:18 ms(典型值) – 全片擦除时间:40 ms(典型值) – 字编程时间:7 µs(典型值) )
自动写入时序——内部 VPP 生成
写入结束检测 – 切换位 – 数据#轮询
CMOS I/O 兼容性
JEDEC 标准 - 闪存 EEPROM 引脚分配 - 软件命令序列兼容性 - 地址格式为 11 位,A10-A0 - 块擦除第 6 总线写周期为 30H - 扇区擦除第 6 总线写周期为 50H
可用封装 – 48 引脚 TSOP (12mm x 20mm)
所有无铅(无铅)设备均符合 RoHS 标准
Summary
The SST39VF6401B device is a 4M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF6401B writes (Program or Erase) with a 2.7-3.6V power supply. This devices conforms to JEDEC standard pinouts for x16 memories and is command set compatible with Flash devices that support the AMD/Spansion command set, enabling customers to save time and resources in implementation.
SST39VF6401B 器件是一款 4M x16、CMOS 多用途闪存 Plus (MPF+),采用 SST 专有的高性能 CMOS SuperFlash 技术制造。与替代方法相比,分裂栅单元设计和厚氧化物隧道注入器具有更好的可靠性和可制造性。SST39VF6401B 使用 2.7-3.6V 电源写入(编程或擦除)。该器件符合 x16 存储器的 JEDEC 标准引脚布局,命令集与支持 AMD/Spansion 命令集的闪存设备兼容,使客户能够节省实施时间和资源。
Additional Features
Organized as 4M x16
Single Voltage Read and Write Operations– 2.7-3.6V
Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF6402B– Bottom Block-Protection (bottom 32 KWord)for SST39VF6401B
Sector-Erase Capability– Uniform 2 KWord sectors
Block-Erase Capability– Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature– SST: 128 bits; User: 128 bits
Fast Read Access Time:– 70 ns– 90 ns
Latched Address and Data
Fast Erase and Word-Program:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)– Word-Program Time: 7 µs (typical)
Automatic Write Timing– Internal VPP Generation
End-of-Write Detection– Toggle Bits– Data# Polling
CMOS I/O Compatibility
JEDEC Standard– Flash EEPROM Pin Assignments– Software command sequence compatibility- Address format is 11 bits, A10-A0- Block-Erase 6th Bus Write Cycle is 30H- Sector-Erase 6th Bus Write Cycle is 50H
Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (8mm x 10mm)
All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Op. Volt Range (V)
2.7 to 3.6
Temp Range (°C)
-40°C to +85°C