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SST39VF010-70-4I-NHE您现在的位置：首 页 > SST39VF010-70-4I-NHE
| SST39VF010-70-4I-NHE | |
| 宝星微库存：1000 PCS | |
| 厂商： Microchip | |
| 封装： PLCC | |
| 年份： 1044+1 | |
| 备注： 只供应原装正品 | |
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SST39VF010
1Mb 2.7-3.6V Parallel Flash
Status: In Production
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF010/020/040
– 2.7-3.6V for SST39VF010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 55 ns for SST39LF010/020/040
– 70 ns for SST39VF010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
• All devices are RoHS compliant
